The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 08, 2023

Filed:

Sep. 21, 2018
Applicant:

Universita' Degli Studi Di Roma “la Sapienza”, Rome, IT;

Inventor:

Fabrizio Palma, Rome, IT;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 35/00 (2006.01); C23C 16/02 (2006.01); C23C 16/00 (2006.01); C23C 16/24 (2006.01); H01L 21/02 (2006.01); H05B 6/64 (2006.01); C30B 29/60 (2006.01);
U.S. Cl.
CPC ...
C23C 16/0209 (2013.01); C23C 16/003 (2013.01); C23C 16/24 (2013.01); C30B 29/602 (2013.01); C30B 29/605 (2013.01); C30B 35/00 (2013.01); H01L 21/02532 (2013.01); H01L 21/02603 (2013.01); H01L 21/02653 (2013.01); H05B 6/6402 (2013.01); Y10T 117/10 (2015.01);
Abstract

An assembly for the deposition of silicon nanostructures comprising a deposition chamber, which is defined by a side wall and by two end walls; a microwave generator, which is adapted to generate microwaves inside the deposition chamber; an electromagnetic termination wall, made of a conductor material and reflecting the microwave radiation, which is such as to create a termination for a TE-mode waveguide and is housed inside the deposition chamber; and a substrate-carrier support, which is made of a dielectric material and on which the substrate is housed on which to perform the growth of silicon nanostructures. The substrate-carrier support is arranged inside the deposition chamber above the termination wall.


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