The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 01, 2023
Filed:
Jan. 07, 2021
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Gi Yong Chung, Seoul, KR;
Ho Jin Kim, Hwaseong-si, KR;
Young-Jin Kwon, Suwon-si, KR;
Dong Seog Eun, Seongnam-si, KR;
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11582 (2017.01); H10B 43/27 (2023.01); G11C 8/14 (2006.01); H10B 41/10 (2023.01); H10B 41/27 (2023.01); H10B 41/40 (2023.01); H10B 43/10 (2023.01); H10B 43/40 (2023.01);
U.S. Cl.
CPC ...
H10B 43/27 (2023.02); G11C 8/14 (2013.01); H10B 41/10 (2023.02); H10B 41/27 (2023.02); H10B 41/40 (2023.02); H10B 43/10 (2023.02); H10B 43/40 (2023.02);
Abstract
A nonvolatile memory device includes a substrate including a cell array region, a first gate electrode including an opening on the cell array region of the substrate, a plurality of second gate electrodes stacked above the first gate electrode and including convex portions having an outward curve extending toward the substrate, and a word line cutting region cutting the opening and the convex portions.