The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 01, 2023

Filed:

Apr. 16, 2021
Applicant:

Innoscience (Suzhou) Technology Co., Ltd., Suzhou, CN;

Inventors:

Yanbo Zou, Suzhou, CN;

Fada Du, Suzhou, CN;

Wenbin Xie, Suzhou, CN;

Chao Tang, Suzhou, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 3/00 (2006.01); H03K 17/687 (2006.01); H02M 1/00 (2006.01); H02M 1/08 (2006.01);
U.S. Cl.
CPC ...
H03K 17/687 (2013.01); H02M 1/0045 (2021.05); H02M 1/08 (2013.01);
Abstract

The present disclosure provides a controller for controlling a GaN-based semiconductor device. The controller is configured to receive a current sensing signal Vwhich is indicative of a drain-to-source current of the GaN-based semiconductor device and generate a control driving signal Vto the GaN-based semiconductor device such that a gate-to-source voltage Vapplied to the GaN-based semiconductor device for switching on the GaN-based semiconductor device is stabilized to a voltage value equal to a reference voltage Vover an on-time duration. Impact of the change in the voltage drop across the current sensing resistor to the operation of the GaN-based semiconductor device is eliminated.


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