The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 01, 2023
Filed:
May. 19, 2021
Applicant:
Google Llc, Mountain View, CA (US);
Inventors:
Benjamin Leung, Sunnyvale, CA (US);
Miao-Chan Tsai, Sunnyvale, CA (US);
Assignee:
GOOGLE LLC, Mountain View, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/38 (2010.01); H01L 33/06 (2010.01); H01L 33/14 (2010.01); H01L 33/00 (2010.01); H01L 33/20 (2010.01);
U.S. Cl.
CPC ...
H01L 33/06 (2013.01); H01L 33/0075 (2013.01); H01L 33/145 (2013.01); H01L 33/20 (2013.01); H01L 33/385 (2013.01);
Abstract
A light emitting diode (LED) structure includes a semiconductor template having a template top-surface, an active quantum well (QW) structure formed over the semiconductor template, and a p-type layer. The p-type layer has a bottom-surface that faces the active QW and the template top-surface. The bottom-surface includes a recess sidewall. The recess sidewall of the p-type layer is configured for promoting injection of holes into the active QW structure through a QW sidewall of the active QW structure.