The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 01, 2023
Filed:
Mar. 09, 2021
Asahi Kasei Microdevices Corporation, Tokyo, JP;
Osamu Morohara, Tokyo, JP;
Yoshiki Sakurai, Tokyo, JP;
Hiromi Fujita, Tokyo, JP;
Hirotaka Geka, Tokyo, JP;
Asahi Kasei Microdevices Corporation, Tokyo, JP;
Abstract
Provided is an infrared detecting device with a high SNR. The infrared detecting device includes: a semiconductor substrate; a first layerhaving a first conductivity type on the semiconductor substrate; a light receiving layeron the first layer; and a second layerhaving a second conductivity type on the light receiving layer. A part of the first layer, the light receiving layer, and the second layer form a mesa structure, the light receiving layer contains AlInSb (0.05<x<0.18), and at least a part of side surfaces of the mesa structure are covered with a protective layer, and part of the protective layer that is in contact with side surfaces of the light receiving layer is made of silicon nitride.