The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 01, 2023
Filed:
Oct. 19, 2020
Applicant:
Applied Materials, Inc., Santa Clara, CA (US);
Inventor:
Angada B. Sachid, San Jose, CA (US);
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/49 (2006.01); H01L 29/78 (2006.01); H01L 29/51 (2006.01); H01L 29/66 (2006.01); H01L 21/28 (2006.01); H01L 21/764 (2006.01);
U.S. Cl.
CPC ...
H01L 29/4991 (2013.01); H01L 21/28088 (2013.01); H01L 21/28123 (2013.01); H01L 21/764 (2013.01); H01L 29/4966 (2013.01); H01L 29/516 (2013.01); H01L 29/6653 (2013.01); H01L 29/6656 (2013.01); H01L 29/6684 (2013.01); H01L 29/66545 (2013.01); H01L 29/78391 (2014.09);
Abstract
Processing methods may be performed to form an airgap in a semiconductor structure. The methods may include forming a high-k material on a floor of a trench. The trench may be defined on a semiconductor substrate between sidewalls of a first material and a spacer material. The methods may include forming a gate structure on the high-k material. The gate structure may contact the first material along each sidewall of the trench. The methods may also include etching the first material. The etching may form an airgap adjacent the gate structure.