The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 01, 2023
Filed:
Feb. 21, 2020
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Toshiba Electronic Devices & Storage Corporation, Minato-ku, JP;
Akira Mukai, Kawasaki, JP;
Masahiko Kuraguchi, Yokohama, JP;
KABUSHIKI KAISHA TOSHIBA, Minato-ku, JP;
TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION, Minato-ku, JP;
Abstract
According to one embodiment, a semiconductor device includes first, second, and third electrodes, and first, second, and third semiconductor regions. The third electrode is between the first electrode and the second electrodes. The first semiconductor region includes AlGaN and includes first to seventh partial regions. The fourth partial region is between the first partial region and the third partial region. The fifth partial region is between the third partial region and the second partial region. The second semiconductor region includes AlGaN and includes first and second semiconductor portions. The sixth partial region is between the fourth partial region and the first semiconductor portion. The seventh partial region is between the fifth partial region and the second semiconductor portion. The third semiconductor region includes AlGaN and includes a first semiconductor film part. The first semiconductor film part is between the sixth partial region and the third electrode.