The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 01, 2023
Filed:
Oct. 18, 2021
Powerchip Semiconductor Manufacturing Corporation, Hsinchu, TW;
Chun-Sheng Chen, Taipei, TW;
Powerchip Semiconductor Manufacturing Corporation, Hsinchu, TW;
Abstract
A method of manufacturing a channel all-around semiconductor device includes: forming a plurality of gate structures having the same extension direction, and forming a multi-connected channel layer on a substrate. Each of the gate structures has opposite first end and second end, and the gate structures are all surrounded by the formed multi-connected channel layer, and a plane direction of the multi-connected channel layer is perpendicular to the extension direction of the gate structures, so that channels of the gate structures are connected to each other.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile