The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

H01L 27/32 (2006.01); H01L 51/56 (2006.01); H01L 27/12 (2006.01); H01L 29/786 (2006.01); H01L 21/3215 (2006.01); H01L 21/02 (2006.01); H10K 59/124 (2023.01); H10K 71/00 (2023.01); H10K 59/123 (2023.01); H10K 59/12 (2023.01);

U.S. Cl.

CPC ...

H01L 27/1222 (2013.01); H01L 21/02068 (2013.01); H01L 21/02532 (2013.01); H01L 21/02658 (2013.01); H01L 21/02675 (2013.01); H01L 21/32155 (2013.01); H01L 27/1274 (2013.01); H01L 29/78696 (2013.01); H10K 59/124 (2023.02); H10K 71/00 (2023.02); H10K 59/1201 (2023.02); H10K 59/123 (2023.02);

Abstract

An embodiment provides a manufacturing method of a polycrystalline silicon layer, including: forming a first amorphous silicon layer on a substrate; doping an N-type impurity into the first amorphous silicon layer; forming a second amorphous silicon layer on the n-doped first amorphous silicon layer; doping a P-type impurity into the second amorphous silicon layer; and crystalizing the n-doped first amorphous silicon layer and the p-doped second amorphous silicon layer by irradiating a laser beam onto n-doped first amorphous silicon layer and the p-doped second amorphous silicon layer to form a polycrystalline silicon layer.

Find Patent Forward Citations