The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 01, 2023
Filed:
Sep. 02, 2019
Applicant:
Central Glass Company, Limited, Yamaguchi, JP;
Inventors:
Shoi Suzuki, Yamaguchi, JP;
Akifumi Yao, Yamaguchi, JP;
Assignee:
CENTRAL GLASS COMPANY, LIMITED, Yamaguchi, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); C09K 13/08 (2006.01); H01L 21/67 (2006.01); H01L 21/302 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31116 (2013.01); C09K 13/08 (2013.01); H01L 21/02164 (2013.01); H01L 21/302 (2013.01); H01L 21/67069 (2013.01); H01L 21/67103 (2013.01);
Abstract
The method of dry-etching silicon oxide of the present disclosure includes reacting silicon oxide with any one of the following (A) to (C): (A) a gaseous hydrogen fluoride and a gaseous organic amine compound, (B) a gaseous hydrogen fluoride salt of an organic amine compound, and (C) a gaseous hydrogen fluoride, a gaseous organic amine compound, and a gaseous hydrogen fluoride salt of an organic amine compound in a non-plasma state.