The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 01, 2023
Filed:
Sep. 28, 2020
Applicant:
Samsung Electro-mechanics Co., Ltd., Suwon-si, KR;
Inventors:
Assignee:
SAMSUNG ELECTRO-MECHANICS CO., LTD., Suwon-si, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01G 4/30 (2006.01); C08K 3/26 (2006.01); H01G 4/012 (2006.01); H01G 4/12 (2006.01); H01G 4/008 (2006.01); C04B 35/468 (2006.01);
U.S. Cl.
CPC ...
H01G 4/30 (2013.01); C04B 35/468 (2013.01); C08K 3/26 (2013.01); H01G 4/008 (2013.01); H01G 4/012 (2013.01); H01G 4/1227 (2013.01); C01P 2002/74 (2013.01); C08K 2003/265 (2013.01);
Abstract
A dielectric material includes a main component represented by (BaCa)(TiZr)O, (BaCa)(TiSn)O, or (BaCa)(TiHf)O(0≤x≤1 and 0≤y≤0.05) and a subcomponent. When an angle corresponding to a maximum peak is referred to as θand angles corresponding to a full width at half maximum (FWHM) are respectively referred to as θand θ(θ1<θ2) in the peaks of (002) and (200) plane of an x-ray diffraction (XRD) pattern using Cu Kα1 radiation (wavelength Δ=1.5406 Å), (θ−θ)/(θ−θ) is greater than 0.54 to 1.0 or less.