The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 01, 2023
Filed:
Aug. 23, 2021
Samsung Electronics Co., Ltd., Suwon-si, KR;
Jun-Ho Seo, Hwaseong-si, KR;
Yong-Lae Kim, Hwaseong-si, KR;
Haneol Jang, Hwaseong-si, KR;
Hyukje Kwon, Seoul, KR;
Sang-Wan Nam, Hwaseong-Si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A nonvolatile memory device includes a memory block including a first structure formed on a substrate and a second structure formed on the first structure. An erase method of the nonvolatile memory device includes applying a word line erase voltage to first normal word lines of the first structure and second normal word lines of the second structure, and applying a junction word line erase voltage smaller than the word line erase voltage to at least one of a first junction word line of the first structure and a second junction word line of the second structure. The first junction word line is a word line adjacent to the second structure from among word lines of the first structure, and the second junction word line is a word line adjacent to the first structure from among word lines of the second structure.