The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 01, 2023

Filed:

Jun. 03, 2019
Applicants:

Beijing Boe Display Technology Co., Ltd., Beijing, CN;

Boe Technology Group Co., Ltd., Beijing, CN;

Inventor:

Lianjie Qu, Beijing, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/00 (2006.01); C23C 14/04 (2006.01); G03F 7/20 (2006.01); H10K 71/16 (2023.01);
U.S. Cl.
CPC ...
G03F 7/0035 (2013.01); C23C 14/042 (2013.01); G03F 7/2018 (2013.01); H10K 71/166 (2023.02);
Abstract

A mask and a method of manufacturing the same, an evaporation apparatus and a display device are provided. The method includes forming a first photoresist pattern on a substrate, the first photoresist pattern including a plurality of photoresist structures, each photoresist structure including a first surface away from the substrate and a second surface near the substrate, and the size of the first surface being smaller than that of the second surface; forming a metal layer on the substrate with the first photoresist pattern, the metal layer including a plurality of recessed regions and a plurality of raised regions; forming a second photoresist pattern in the recessed regions, an orthographic projection of the second photoresist pattern on the metal layer overlapping with the recessed regions; removing regions of the metal layer not covered by the second photoresist pattern, the second photoresist pattern, the substrate and the first photoresist pattern mask.


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