The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 01, 2023

Filed:

Jun. 21, 2022
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Kevin Griffin, Livermore, CA (US);

Sanjeev Baluja, Campbell, CA (US);

Joseph AuBuchon, San Jose, CA (US);

Mario D. Silvetti, Fountain Hills, AZ (US);

Hari Ponnekanti, San Jose, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/40 (2006.01); C23C 16/455 (2006.01); C23C 16/458 (2006.01); C23C 16/52 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
C23C 16/45565 (2013.01); C23C 16/458 (2013.01); C23C 16/45544 (2013.01); C23C 16/45589 (2013.01); C23C 16/52 (2013.01); H01J 37/3244 (2013.01); H01J 37/32431 (2013.01); H01J 37/32449 (2013.01);
Abstract

Processing chambers and methods to disrupt the boundary layer are described. The processing chamber includes a showerhead and a substrate support therein. The showerhead and the substrate support are spaced to have a process gap between them. In use, a boundary layer is formed adjacent to the substrate support or wafer surface. As the reaction occurs at the wafer surface, reaction products and byproduct are produced, resulting in reduced chemical utilization rate. The processing chamber and methods described disrupt the boundary layer by changing one or more process parameters (e.g., pressure, flow rate, time, process gap or temperature of fluid passing through the showerhead).


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