The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 01, 2023

Filed:

Jun. 15, 2022
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Shuaidi Zhang, San Jose, CA (US);

Ning Li, San Jose, CA (US);

Mihaela A. Balseanu, Sunnyvale, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/78 (2006.01); C23C 16/455 (2006.01); C23C 16/36 (2006.01);
U.S. Cl.
CPC ...
C23C 16/45553 (2013.01); C23C 16/36 (2013.01); C23C 16/45542 (2013.01); H01L 21/0228 (2013.01); H01L 21/02126 (2013.01); H01L 21/02219 (2013.01); H01L 21/02274 (2013.01); H01L 29/78 (2013.01);
Abstract

Methods for plasma enhanced atomic layer deposition (PEALD) of low-κ films are described. A method of depositing a film comprises exposing a substrate to a silicon precursor having the general formula (I) wherein R, R, R, R, R, and Rare independently selected from hydrogen (H), substituted alkyl, or unsubstituted alkyl; purging the processing chamber of the silicon precursor; exposing the substrate to a carbon monoxide (CO) plasma to form one or more of a silicon oxycarbide (SiOC) or silicon oxycarbonitride (SiOCN) film on the substrate; and purging the processing chamber.


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