The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 01, 2023

Filed:

Aug. 30, 2022
Applicant:

Texas Instruments Incorporated, Dallas, TX (US);

Inventors:

Patrick Ian Oden, McKinney, TX (US);

James Norman Hall, Parker, TX (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B81C 1/00 (2006.01); G03B 21/00 (2006.01); B81B 3/00 (2006.01); H04N 13/365 (2018.01); H04N 5/74 (2006.01);
U.S. Cl.
CPC ...
B81C 1/00492 (2013.01); B81B 3/0018 (2013.01); B81C 1/00404 (2013.01); G03B 21/008 (2013.01); B81B 2201/042 (2013.01); H04N 5/7458 (2013.01); H04N 13/365 (2018.05); Y10S 359/904 (2013.01);
Abstract

In one example, a method comprises forming a first layer on a substrate surface, forming an opening in the first layer, forming a second layer on the first layer and in the opening, and forming a photoresist layer on the second layer, in which the photoresist layer has a first curved surface over a first part of the first layer and over the opening. The method further comprises etching the photoresist layer and a second part of the second layer over the first part of the first layer to form a second curved surface on the second part of the second layer, and forming a mirror element and a support structure in the second layer, including by etching a third part of the second layer and removing the first layer.


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