The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 01, 2023

Filed:

Dec. 09, 2020
Applicant:

Microjet Technology Co., Ltd., Hsinchu, TW;

Inventors:

Hao-Jan Mou, Hsinchu, TW;

Ying-Lun Chang, Hsinchu, TW;

Hsien-Chung Tai, Hsinchu, TW;

Chi-Feng Huang, Hsinchu, TW;

Yung-Lung Han, Hsinchu, TW;

Tsung-I Lin, Hsinchu, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B41J 2/14 (2006.01); B41J 2/16 (2006.01); B41J 2/335 (2006.01); B41J 2/17 (2006.01);
U.S. Cl.
CPC ...
B41J 2/14024 (2013.01); B41J 2/14129 (2013.01); B41J 2/14072 (2013.01); B41J 2/1707 (2013.01); B41J 2/33595 (2013.01); B41J 2202/11 (2013.01); B41J 2202/13 (2013.01);
Abstract

A wafer structure is disclosed and includes a chip substrate and a plurality of inkjet chips. The chip substrate is a silicon substrate which is fabricated by a semiconductor process. The plurality of inkjet chips include at least one first inkjet chip and at least one second inkjet chip. The plurality of inkjet chips are directly formed on the chip substrate by the semiconductor process, respectively, and diced into the at least one first inkjet chip and the at least one second inkjet chip, to be implemented for inkjet printing. Each of the first inkjet chip and the second inkjet chip includes a plurality of ink-drop generators produced by the semiconductor process and formed on the chip substrate. Each ink-drop generator includes a barrier layer, an ink-supply chamber and a nozzle. The ink-supply chamber and the nozzle are integrally formed in the barrier layer.


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