The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 25, 2023

Filed:

May. 06, 2021
Applicant:

Panasonic Intellectual Property Management Co., Ltd., Osaka, JP;

Inventors:

Masaya Hirade, Osaka, JP;

Manabu Nakata, Osaka, JP;

Katsuya Nozawa, Osaka, JP;

Yasunori Inoue, Osaka, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 51/44 (2006.01); H10K 30/82 (2023.01); H10K 30/30 (2023.01); H10K 39/32 (2023.01); H10K 71/13 (2023.01); H10K 71/16 (2023.01); H10K 71/20 (2023.01);
U.S. Cl.
CPC ...
H10K 30/82 (2023.02); H10K 30/353 (2023.02); H10K 39/32 (2023.02); H10K 71/135 (2023.02); H10K 71/164 (2023.02); H10K 71/231 (2023.02);
Abstract

A method for manufacturing a photoelectric conversion element includes providing a base structure including a semiconductor substrate having a principal surface, a first electrode located on or above the principal surface, second electrodes which are located on or above the principal surface and which are one- or two-dimensionally arranged, and a photoelectric conversion film covering at least the second electrodes; forming a mask layer on the photoelectric conversion film, the mask layer being conductive and including a covering section covering a portion of the photoelectric conversion film that overlaps the second electrodes in plan view; and partially removing the photoelectric conversion film by immersing the base structure and the mask layer in an etchant.


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