The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 25, 2023
Filed:
Aug. 28, 2020
Commissariat À L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
Universite Grenoble Alpes, Saint-Martin d'Heres, FR;
Centre National DE LA Recherche Scientifique, Paris, FR;
Gabriele Navarro, Grenoble, FR;
Nicolas Guillaume, Grenoble, FR;
Serge Blonkowski, Meylan, FR;
Patrice Gonon, Saint Egrève, FR;
Eric Jalaguier, Grenoble, FR;
COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, Paris, FR;
UNIVERSITE GRENOBLE ALPES, Saint-Martin d'Heres, FR;
CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE, Paris, FR;
Abstract
A filament type non-volatile memory device, includes a first electrode, a second electrode and an active layer extending between the first electrode and the second electrode, the active layer electrically interconnecting the first electrode to the second electrode, the device being suitable for having: a low resistive state, in which a conducting filament electrically interconnecting the first electrode to the second electrode uninterruptedly extends from end to end through the active layer, the filament having a low electric resistance, and a highly resistive state, in which the filament is broken, the filament having a high electric resistance. The device further includes a shunt resistance electrically connected in parallel to the active layer, between the first electrode and the second electrode.