The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 25, 2023

Filed:

Oct. 21, 2020
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Sunggil Kim, Yongin-si, KR;

Seulye Kim, Seoul, KR;

Jung-Hwan Kim, Seoul, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11582 (2017.01); H10B 43/27 (2023.01); H10B 41/27 (2023.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H10B 43/27 (2023.02); H10B 41/27 (2023.02); H01L 21/02233 (2013.01);
Abstract

A semiconductor memory device includes a substrate with a cell array region and a connection region, an electrode structure including electrodes stacked on the substrate and having a staircase structure on the connection region, a vertical channel structure on the cell array region to penetrate the electrode structure and electrically connected to the substrate, a dummy structure on the connection region to penetrate the staircase structure, and a first sidewall oxide pattern interposed between the substrate and the dummy structure. The dummy structure includes an upper portion that is on the substrate, a middle portion that is in contact with the first sidewall oxide pattern, and a lower portion that is below the middle portion. With increasing vertical distance from the upper portion, a diameter of the middle portion decreases until it reaches its smallest value and then increases.


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