The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 25, 2023
Filed:
Jan. 25, 2021
Applicant:
Nuvoton Technology Corporation Japan, Kyoto, JP;
Inventors:
Tougo Nakatani, Toyama, JP;
Masayuki Hata, Osaka, JP;
Assignee:
NUVOTON TECHNOLOGY CORPORATION JAPAN, Kyoto, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/32 (2006.01); H01S 5/20 (2006.01); H01S 5/343 (2006.01); H01S 5/02 (2006.01); H01S 5/22 (2006.01);
U.S. Cl.
CPC ...
H01S 5/3216 (2013.01); H01S 5/0206 (2013.01); H01S 5/2009 (2013.01); H01S 5/2031 (2013.01); H01S 5/22 (2013.01); H01S 5/34313 (2013.01);
Abstract
A semiconductor laser element includes: an n-type cladding layer disposed above an n-type semiconductor substrate (a chip-like substrate); an active layer disposed above the n-type cladding layer; and a p-type cladding layer disposed above the active layer, in which the active layer includes a well layer and a barrier layer, an energy band gap of the barrier layer is larger than an energy band gap of the n-type cladding layer, and a refractive index of the barrier layer is higher than a refractive index of the n-type cladding layer.