The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 25, 2023
Filed:
Sep. 24, 2020
Applicant:
Glo Ab, Lund, SE;
Inventors:
Fariba Danesh, Los Altos Hills, CA (US);
Tsun Lau, Sunnyvale, CA (US);
Richard P. Schneider, Jr., Albuquerque, NM (US);
Michael Jansen, Palo Alto, CA (US);
Max Batres, Sunnyvale, CA (US);
Assignee:
NANOSYS, INC., Milpitas, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/42 (2010.01); H01L 25/075 (2006.01); H01L 27/12 (2006.01); H01L 33/00 (2010.01); H01L 33/06 (2010.01); H01L 33/32 (2010.01); H01L 33/46 (2010.01); H01L 33/62 (2010.01); H01L 33/24 (2010.01); H01L 33/40 (2010.01);
U.S. Cl.
CPC ...
H01L 33/42 (2013.01); H01L 25/0753 (2013.01); H01L 27/1214 (2013.01); H01L 33/007 (2013.01); H01L 33/0093 (2020.05); H01L 33/0095 (2013.01); H01L 33/06 (2013.01); H01L 33/32 (2013.01); H01L 33/46 (2013.01); H01L 33/62 (2013.01); H01L 33/24 (2013.01); H01L 33/405 (2013.01); H01L 2933/0016 (2013.01); H01L 2933/0025 (2013.01); H01L 2933/0066 (2013.01);
Abstract
A method of forming a light emitting device includes forming a semiconductor light emitting diode, forming a metal layer stack including a first metal layer and a second metal layer on the light emitting diode, and oxidizing the metal layer stack to form transparent conductive layer including at least one conductive metal oxide.