The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 25, 2023
Filed:
Sep. 11, 2020
Applicant:
Raytheon Company, Waltham, MA (US);
Inventor:
James Pattison, Santa Barbara, CA (US);
Assignee:
RAYTHEON COMPANY, Waltham, MA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/18 (2006.01); H01L 31/0296 (2006.01); H01L 31/0304 (2006.01); H01L 31/0352 (2006.01); H01L 21/04 (2006.01); H01L 21/20 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 31/1836 (2013.01); H01L 31/02966 (2013.01); H01L 31/0304 (2013.01); H01L 31/03046 (2013.01); H01L 31/035236 (2013.01); H01L 31/1832 (2013.01); H01L 31/1844 (2013.01); H01L 31/1852 (2013.01); H01L 21/02694 (2013.01); H01L 21/0415 (2013.01); H01L 21/2015 (2013.01);
Abstract
A method of fabricating a semiconductor device includes implanting dopants into a silicon substrate, and performing a thermal anneal process that activates the implanted dopants. In response to activating the implanted dopants, a layer of ultra-thin single-crystal silicon is formed in a portion of the silicon substrate. The method further includes performing a heteroepitaxy process to grow a semiconductor material from the layer of ultra-thin single-crystal silicon.