The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 25, 2023
Filed:
Aug. 13, 2019
Applicant:
Sony Semiconductor Solutions Corporation, Kanagawa, JP;
Inventor:
Kazuyuki Tomida, Kanagawa, JP;
Assignee:
SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 21/3115 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0673 (2013.01); H01L 21/31155 (2013.01); H01L 29/7851 (2013.01);
Abstract
A semiconductor device according to the present disclosure includes a channel portion, a gate electrode disposed opposite the channel portion via a gate insulating film, and source/drain regions disposed at both edges of the channel portion. The source/drain regions include semiconductor layers that have a first conductivity type and that are formed inside recessed portions disposed on a base body. Impurity layers having a second conductivity type different from the first conductivity type are formed between the base body and bottom portions of the semiconductor layers.