The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 25, 2023

Filed:

Jan. 22, 2021
Applicant:

Semiconductor Components Industries, Llc, Phoenix, AZ (US);

Inventor:

Gary Horst Loechelt, Tempe, AZ (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/07 (2006.01); H01L 29/06 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0607 (2013.01); H01L 27/0727 (2013.01); H01L 28/40 (2013.01);
Abstract

In a general aspect, a semiconductor device can include a semiconductor region, an active region disposed in the semiconductor region, and a termination region disposed on the semiconductor region and adjacent to the active region. The termination region can include a trench having a conductive material disposed therein. The termination region can further include a first cavity separating the trench from the semiconductor region. A portion of the first cavity can be disposed between a bottom of the trench and the semiconductor region. The termination region can also include a second cavity separating the trench from the semiconductor region.


Find Patent Forward Citations

Loechelt, Gary. (2023). Dielectric lattice with capacitor and shield structures (U.S. Patent No. 11710767). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11710767

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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