The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 25, 2023
Filed:
Mar. 23, 2021
Fuji Electric Co., Ltd., Kanagawa, JP;
Tomoyuki Obata, Matsumoto, JP;
FUJI ELECTRIC CO., LTD., Kanagawa, JP;
Abstract
Provided is a semiconductor device comprising a semiconductor substrate containing oxygen. An oxygen concentration distribution in a depth direction of the semiconductor substrate has a high oxygen concentration part where an oxygen concentration is higher on a further upper surface-side than a center in the depth direction of the semiconductor substrate than in a lower surface of the semiconductor substrate. The high oxygen concentration part may have a concentration peak in the oxygen concentration distribution. A crystal defect density distribution in the depth direction of the semiconductor substrate has an upper surface-side density peak on the upper surface-side of the semiconductor substrate, and the upper surface-side density peak may be arranged within a depth range in which the oxygen concentration is equal to or greater than 50% of a peak value of the concentration peak.