The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 25, 2023

Filed:

Dec. 10, 2020
Applicant:

Omnivision Technologies, Inc., Santa Clara, CA (US);

Inventors:

Yuanliang Liu, San Jose, CA (US);

Bill Phan, San Jose, CA (US);

Duli Mao, Sunnyvale, CA (US);

Hui Zang, San Jose, CA (US);

Assignee:

OmniVision Technologies, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14623 (2013.01); H01L 27/1463 (2013.01); H01L 27/14605 (2013.01); H01L 27/14685 (2013.01); H01L 27/14621 (2013.01); H01L 27/14627 (2013.01);
Abstract

A flicker-mitigating pixel-array substrate includes a semiconductor substrate and a metal annulus. The semiconductor substrate includes a small-photodiode region. A back surface of the semiconductor substrate forms a trench surrounding the small-photodiode region in a cross-sectional plane parallel to a back-surface region of the back surface above the small-photodiode region. The metal annulus (i) at least partially fills the trench, (ii) surrounds the small-photodiode region in the cross-sectional plane, and (iii) extends above the back surface. A method for fabricating a flicker-mitigating pixel-array substrate includes forming a metal layer (i) in a trench that surrounds the small-photodiode region in a cross-sectional plane parallel to a back-surface region of the back surface above the small-photodiode region and (ii) on the back-surface region. The method also includes decreasing a thickness of an above-diode section of the metal layer located above the back-surface region.


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