The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 25, 2023

Filed:

Apr. 12, 2021
Applicant:

Denso Corporation, Kariya, JP;

Inventors:

Ryoichi Kaizu, Kariya, JP;

Takumi Nomura, Kariya, JP;

Tetsuto Yamagishi, Kariya, JP;

Yuki Inaba, Kariya, JP;

Yoshitsugu Sakamoto, Kariya, JP;

Assignee:

DENSO CORPORATION, Kariya, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/31 (2006.01); H01L 23/495 (2006.01); H01L 23/00 (2006.01); B23K 35/26 (2006.01); B23K 35/30 (2006.01); C22C 12/00 (2006.01); H02P 27/06 (2006.01);
U.S. Cl.
CPC ...
H01L 23/562 (2013.01); B23K 35/264 (2013.01); B23K 35/30 (2013.01); C22C 12/00 (2013.01); H01L 23/3107 (2013.01); H01L 23/4952 (2013.01); H01L 23/49513 (2013.01); H01L 23/49562 (2013.01); H01L 23/49568 (2013.01); H01L 23/49575 (2013.01); H01L 23/49582 (2013.01); H01L 24/29 (2013.01); H01L 2224/2922 (2013.01); H01L 2224/29213 (2013.01); H01L 2224/29239 (2013.01); H01L 2224/29247 (2013.01); H01L 2224/29255 (2013.01); H01L 2924/014 (2013.01); H01L 2924/10272 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/15747 (2013.01); H01L 2924/181 (2013.01); H01L 2924/3511 (2013.01); H02P 27/06 (2013.01);
Abstract

A semiconductor device includes a semiconductor chip made of a SiC substrate and having main electrodes on one surface and a rear surface, first and second heat sinks, respectively, disposed adjacent to the one surface and the rear surface, a terminal member interposed between the second heat sink and the semiconductor chip, and a plurality of bonding members disposed between the main electrodes, the first and second heat sinks, and the terminal member. The terminal member includes plural types of metal layers symmetrically layered in the plate thickness direction. The terminal member as a whole has a coefficient of linear expansion at least in a direction orthogonal to the plate thickness direction in a range larger than that of the semiconductor chip and smaller than that of the second heat sink.


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