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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11710666 B1

PDFFull Text
Date of Patent:
Jul. 25, 2023

Filed:

Jun. 30, 2021

Dummy fin template to form a self-aligned metal contact for output of vertical transport field effect transistor

Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Junli Wang, Slingerlands, NY (US);

Brent Alan Anderson, Jericho, VT (US);

Albert Young, Fishkill, NY (US);

Assignee:

INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);

Attorneys:

Cantor Colburn LLP

Anthony England

Primary Examiner:

Errol V Fernandes

Assistant Examiner:

Jeremy J Joy

Int. Cl.
CPC ...
H01L 23/528 (2006.01); H01L 23/535 (2006.01); H01L 27/088 (2006.01); H01L 29/417 (2006.01); H01L 27/092 (2006.01); H01L 29/78 (2006.01); H01L 21/8234 (2006.01); H01L 29/66 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823475 (2013.01); H01L 21/823418 (2013.01); H01L 21/823431 (2013.01); H01L 21/823481 (2013.01); H01L 21/823487 (2013.01); H01L 23/5286 (2013.01); H01L 23/535 (2013.01); H01L 27/088 (2013.01); H01L 29/66545 (2013.01); H01L 29/66666 (2013.01); H01L 29/66795 (2013.01); H01L 29/7827 (2013.01); H01L 21/823821 (2013.01); H01L 21/823871 (2013.01); H01L 27/0924 (2013.01); H01L 29/41791 (2013.01);
Abstract

A technique relates to a semiconductor device. A source/drain layer is formed. Fins with gate stacks are formed in a fill material, a dummy fin template including at least one fin of the fins and at least one gate stack of the gate stacks, the fins being formed on the source/drain layer. A trench is formed through the fill material by removing the dummy fin template, such that a portion of the source/drain layer is exposed in the trench. A source/drain metal contact is formed on the portion of the source/drain layer in the trench.

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