The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 25, 2023

Filed:

Apr. 23, 2020
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Tanmay P. Gurjar, Santa Clara, CA (US);

Sumit S. Patankar, Santa Clara, CA (US);

Sudhir R. Gondhalekar, Santa Clara, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01J 37/305 (2006.01); C23F 1/08 (2006.01); C23C 14/56 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02252 (2013.01); C23C 14/56 (2013.01); C23F 1/08 (2013.01); H01J 37/3053 (2013.01); H01J 37/32357 (2013.01); H01J 37/32522 (2013.01); H01J 2237/0437 (2013.01);
Abstract

Exemplary semiconductor processing systems may include a remote plasma source. The remote plasma source may include a first plasma block segment defining an inlet to an internal channel of the first plasma block segment. The first plasma block segment may also define a cooling channel between the internal channel of the first plasma block segment and a first exterior surface of the first plasma block segment. The remote plasma source may include a second plasma block segment defining an outlet from an internal channel of the second plasma block segment. The second plasma block segment may also define a cooling channel between the internal channel of the second plasma block segment and a first exterior surface of the second plasma block segment. The systems may include a semiconductor processing chamber defining an inlet fluidly coupled with the outlet from the remote plasma source.


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