The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 25, 2023

Filed:

Oct. 30, 2021
Applicants:

Qualcomm Incorporated, San Diego, CA (US);

Henriette C Franck;

Inventor:

Peter J. Shah, San Diego, CA (US);

Assignee:

QUALCOMM Incorporated, San Diego, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01R 21/06 (2006.01); H03K 17/687 (2006.01);
U.S. Cl.
CPC ...
G01R 21/06 (2013.01); H03K 17/6872 (2013.01);
Abstract

Aspects of the disclosure relate to devices, wireless communication apparatuses, methods, and circuitry for a RF power sensor. One aspect is an apparatus including a power sensor transistor configured to receive a radio frequency (RF) input signal and to generate an output indicative of a power of the RF input signal. The apparatus further includes a current source configured to generate a bias current. Also, the apparatus includes a current mirror, which is formed by the power sensor transistor and a second transistor, configured to provide the bias current to the power sensor transistor. The apparatus further includes a feedback circuit, which is coupled to the power sensor transistor and the second transistor, configured to control a drain current of the second transistor with respect to the bias current.


Find Patent Forward Citations

Loading…