The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 25, 2023

Filed:

Dec. 19, 2019
Applicant:

Agc Inc., Chiyoda-ku, JP;

Inventors:

Kazutaka Ono, Tokyo, JP;

Shuhei Nomura, Tokyo, JP;

Nobutaka Kidera, Tokyo, JP;

Nobuhiko Takeshita, Tokyo, JP;

Assignee:

AGC Inc., Chiyoda-ku, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C03C 3/089 (2006.01); C03C 4/16 (2006.01); H05K 1/03 (2006.01); C03C 3/091 (2006.01); H05K 1/02 (2006.01); C03B 25/08 (2006.01); C03C 3/06 (2006.01); C03B 19/14 (2006.01); C03C 3/087 (2006.01); C03B 17/02 (2006.01); C03B 17/06 (2006.01); C03C 3/118 (2006.01); C03C 13/04 (2006.01);
U.S. Cl.
CPC ...
C03C 3/089 (2013.01); C03C 3/091 (2013.01); C03C 4/16 (2013.01); H05K 1/024 (2013.01); H05K 1/03 (2013.01); C03B 17/02 (2013.01); C03B 17/064 (2013.01); C03B 19/14 (2013.01); C03B 25/08 (2013.01); C03C 3/06 (2013.01); C03C 3/087 (2013.01); C03C 3/118 (2013.01); C03C 13/046 (2013.01); C03C 2204/08 (2013.01); C03C 2217/253 (2013.01);
Abstract

A glass substrate for a high-frequency device, which contains SiOas a main component, the glass substrate having a total content of alkali metal oxides in the range of 0.001-5% in terms of mole percent on the basis of oxides, the alkali metal oxides having a molar ratio represented by NaO/(NaO+KO) in the range of 0.01-0.99, and the glass substrate having a total content of alkaline earth metal oxides in the range of 0.1-13% in terms of mole percent on the basis of oxides, wherein at least one main surface of the glass substrate has a surface roughness of 1.5 nm or less in terms of arithmetic average roughness Ra, and the glass substrate has a dielectric dissipation factor at 35 GHz of 0.007 or less.


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