The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 25, 2023

Filed:

Jan. 04, 2021
Applicant:

X-fab Global Services Gmbh, Erfurt, DE;

Inventor:

Steffen Leopold, Ilmenau, DE;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B81C 1/00 (2006.01); B81B 3/00 (2006.01); G01L 9/00 (2006.01);
U.S. Cl.
CPC ...
B81C 1/00158 (2013.01); B81B 3/0021 (2013.01); B81B 2201/0264 (2013.01); B81B 2203/019 (2013.01); B81B 2203/0127 (2013.01); B81C 2201/0125 (2013.01); B81C 2201/0132 (2013.01); B81C 2201/0133 (2013.01); G01L 9/0045 (2013.01);
Abstract

The present invention relates to a method for manufacturing a membrane component with a membrane made of a thin film (<1 μm, thin-film membrane). The membrane component can be used in microelectromechanical systems (MEMS). The invention is intended to provide a method for manufacturing a membrane component, the membrane being manufacturable with high-precision membrane dimensions and a freely selectable membrane geometry. This is achieved by a method comprising . . . providing a semiconductor wafer () with a first layer (), a second layer () and a third layer (). Depositing () a first masking layer () on the first layer (), the first masking layer () defining a first selectively processable area () for determining a geometry of the membrane (M). Forming () a first recess () by anisotropic etching () of the first layer () and removing the first masking layer (). Introducing () a material () in the first recess () and depositing () a membrane layer () on the first layer () with the introduced material (). Depositing on the third layer () a second masking layer that defines a second selectively processable area. Forming a second recess by anisotropic etching of the third layer () and of the second layer () up to the first layer (). Removing the second masking layer; and isotropically etching () the first layer (), the isotropic etching being limited by the membrane layer () and by the introduced material (), so that the membrane (M) will be exposed.


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