The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 18, 2023
Filed:
Apr. 22, 2020
SK Hynix Inc., Icheon, KR;
Gwang Sun Jung, Cheongju, KR;
Sang Hyun Ban, Hwaseong, KR;
Jun Ku Ahn, Hwaseong, KR;
Beom Seok Lee, Suwon, KR;
Young Ho Lee, Seongnam, KR;
Woo Tae Lee, Seoul, KR;
Jong Ho Lee, Seoul, KR;
Hwan Jun Zang, Icheon, KR;
Sung Lae Cho, Gwacheon, KR;
Ye Cheon Cho, Icheon, KR;
Uk Hwang, Yongin, KR;
SK hynix Inc., Icheon, KR;
Abstract
A chalcogenide material may include germanium (Ge), arsenic (As), selenium (Se) and from 0.5 to 10 at % of at least one group 13 element. A variable resistance memory device may include a first electrode, a second electrode, and a chalcogenide film interposed between the first electrode and the second electrode and including from 0.5 to 10 at % of at least one group 13 element. In addition, an electronic device may include a semiconductor memory. The semiconductor memory may include a column line, a row line intersecting the column line, and a memory cell positioned between the column line and the row line, wherein the memory cell comprises a chalcogenide film including germanium (Ge), arsenic (As), selenium (Se), and from 0.5 to 10 at % of at least one group 13 element.