The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 18, 2023

Filed:

Jun. 27, 2018
Applicant:

Microsoft Technology Licensing, Llc, Redmond, WA (US);

Inventors:

Dmitry Pikulin, Goleta, CA (US);

Michael H. Freedman, Santa Barbara, CA (US);

Roman Lutchyn, Santa Barbara, CA (US);

Peter Krogstrup Jeppesen, Frederiksberg, DK;

Parsa Bonderson, Santa Barbara, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 60/01 (2023.01); G06N 10/00 (2022.01); H10N 60/84 (2023.01); H10N 60/10 (2023.01);
U.S. Cl.
CPC ...
H10N 60/01 (2023.02); G06N 10/00 (2019.01); H10N 60/128 (2023.02); H10N 60/84 (2023.02);
Abstract

A quantum device is fabricated by forming a network of nanowires oriented in a plane of a substrate to produce a Majorana-based topological qubit. The nanowires are formed from combinations of selective-area-grown semiconductor material along with regions of a superconducting material. The selective-area-grown semiconductor material is grown by etching trenches to define the nanowires and depositing the semiconductor material in the trenches. A side gate is formed in an etched trench and situated to control a topological segment of the qubit.


Find Patent Forward Citations

Loading…