The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 18, 2023

Filed:

Jun. 10, 2021
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Kwang Seok Kim, Seoul, KR;

Young Man Jang, Hwaseong-si, KR;

Ung Hwan Pi, Hwaseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 50/85 (2023.01); G11C 11/16 (2006.01); H10B 61/00 (2023.01); H10N 50/80 (2023.01); H01F 10/32 (2006.01);
U.S. Cl.
CPC ...
H10N 50/85 (2023.02); G11C 11/161 (2013.01); G11C 11/1659 (2013.01); H10B 61/22 (2023.02); H10N 50/80 (2023.02); H01F 10/3286 (2013.01);
Abstract

In one embodiment, the magnetic memory device includes a free layer structure having a variable magnetization direction. The free layer structure includes a first free layer, the first free layer being a first Heusler alloy; a coupling layer on the first free layer, the coupling layer including a metal oxide layer; and a second free layer on the metal oxide layer, the second free layer being a second Heusler alloy, the second Heusler alloy being different from the first Heusler alloy.


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