The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 18, 2023

Filed:

Feb. 19, 2020
Applicant:

Ningbo Lumilan Advanced Materials Co., Ltd., Zhejiang Province, CN;

Inventors:

Ting-Wei Wei, Zhejiang Province, CN;

Ye Cai, Zhejiang Province, CN;

Huanda Ding, Zhejiang Province, CN;

Kunshan Xie, Zhejiang Province, CN;

Zhi-Kuan Chen, Zhejiang Province, CN;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C07D 491/048 (2006.01); H10K 85/60 (2023.01); C07D 495/04 (2006.01); C07D 513/04 (2006.01); C07D 239/70 (2006.01); H10K 50/11 (2023.01); H10K 50/15 (2023.01); H10K 50/16 (2023.01); H10K 50/17 (2023.01); H10K 50/18 (2023.01); H10K 50/12 (2023.01); H10K 71/00 (2023.01); H10K 71/16 (2023.01); H10K 101/30 (2023.01); H10K 101/40 (2023.01); H10K 102/00 (2023.01);
U.S. Cl.
CPC ...
H10K 85/6572 (2023.02); C07D 239/70 (2013.01); C07D 491/048 (2013.01); C07D 495/04 (2013.01); C07D 513/04 (2013.01); H10K 50/11 (2023.02); H10K 50/121 (2023.02); H10K 50/15 (2023.02); H10K 50/16 (2023.02); H10K 50/17 (2023.02); H10K 50/171 (2023.02); H10K 50/18 (2023.02); H10K 71/00 (2023.02); H10K 71/164 (2023.02); H10K 2101/30 (2023.02); H10K 2101/40 (2023.02); H10K 2102/351 (2023.02);
Abstract

The present invention relates to the field of display technologies, and particularly to a fused polycyclic compound, a preparation method and use thereof. The fused polycyclic compound provided in the present invention has a structure of General Formula IV. The structure of the compound has ambipolarity, and the HOMO level and the LUMO level of the host material are respectively located on different electron donating group and electron withdrawing group, such that the transport of charges and holes in the host material becomes more balanced, thereby expanding the area where holes and electrons are recombined in the light emitting layer, reducing the exciton concentration, preventing the triplet-triplet annihilation of the device, and improving the efficiency of the device.


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