The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 18, 2023

Filed:

Feb. 25, 2021
Applicant:

Ricoh Company, Ltd., Tokyo, JP;

Inventors:

Naomichi Kanei, Shizuoka, JP;

Nozomu Tamoto, Shizuoka, JP;

Yuuji Tanaka, Shizuoka, JP;

Assignee:

RICOH COMPANY, LTD., Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 51/50 (2006.01); H01L 51/44 (2006.01);
U.S. Cl.
CPC ...
H01L 51/5072 (2013.01); H01L 51/44 (2013.01); H01L 51/5096 (2013.01);
Abstract

Photoelectric conversion element including: substrate; first electrode; hole-blocking layer; photoelectric conversion layer; and second electrode, the photoelectric conversion layer including electron-transporting layer and hole-transporting layer, wherein in photoelectric conversion element edge part in direction orthogonal to stacking direction of the substrate, first electrode, hole-blocking layer, photoelectric conversion layer, and second electrode, electron-transporting layer outermost end is positioned inside than first electrode outermost end, hole-transporting layer outermost end is positioned outside than second electrode outermost end, and the second electrode outermost end is positioned inside than the electron-transporting layer outermost end, and height of edge part including the first electrode outermost end in the stacking direction is smaller than total of average thicknesses of first electrode, hole-blocking layer, and electron-transporting layer, where the height is distance between substrate surface at first electrode side and portion of first electrode closest to second electrode side in the photoelectric conversion element edge part.


Find Patent Forward Citations

Loading…