The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 18, 2023

Filed:

Nov. 18, 2019
Applicant:

Illinois Tool Works Inc., Glenview, IL (US);

Inventors:

Marco Carcano, Senago, IT;

Michele Sclocchi, San Donato Milanese, IT;

Daniele Chirico, Brugherio, IT;

Assignee:

ILLINOIS TOOL WORKS INC., Glenview, IL (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H05B 6/68 (2006.01); H01L 23/66 (2006.01); H01L 23/00 (2006.01); H05B 6/66 (2006.01); H03F 3/213 (2006.01);
U.S. Cl.
CPC ...
H05B 6/687 (2013.01); H01L 23/66 (2013.01); H01L 24/40 (2013.01); H01L 24/48 (2013.01); H01L 24/84 (2013.01); H01L 24/85 (2013.01); H03F 3/213 (2013.01); H05B 6/664 (2013.01); H05B 6/686 (2013.01); H01L 2223/6611 (2013.01); H01L 2223/6655 (2013.01); H01L 2224/40091 (2013.01); H01L 2224/40101 (2013.01); H01L 2224/40195 (2013.01); H01L 2224/45014 (2013.01); H01L 2224/4801 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48101 (2013.01); H01L 2224/48153 (2013.01); H01L 2924/30111 (2013.01); H03F 2200/222 (2013.01); H03F 2200/387 (2013.01); H03F 2200/451 (2013.01);
Abstract

Power amplifier electronics for controlling application of radio frequency (RF) energy generated using solid state electronic components may further be configured to control application of RF energy in cycles between high and low powers. The power amplifier electronics may include a semiconductor die on which one or more RF power transistors are fabricated, an output matching network configured to provide impedance matching between the semiconductor die and external components operably coupled to an output tab, and bonding ribbon bonded at terminal ends thereof to operably couple the one or more RF power transistors of the semiconductor die to the output matching network. The bonding ribbon may have a width of greater than about five times a thickness of the bonding ribbon.


Find Patent Forward Citations

Loading…