The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 18, 2023
Filed:
Aug. 26, 2022
Northrop Grumman Systems Corporation, Falls Church, VA (US);
Elizabeth T Kunkee, Manhattan Beach, CA (US);
Dah-Weih Duan, Torrance, CA (US);
Dino Ferizovic, Torrance, CA (US);
Chunbo Zhang, Manhattan Beach, CA (US);
Greta S Tsai, Los Angeles, CA (US);
Ming-Jong Shiau, Cerritos, CA (US);
Daniel R Scherrer, Glendale, CA (US);
Martin E Roden, Long Beach, CA (US);
Northrop Grumann Systems Corporation, Falls Church, WV (US);
Abstract
An exemplary semiconductor technology implemented microwave filter includes a dielectric substrate with metal traces on one surface that function as frequency selective circuits and reference ground. A top enclosure encloses the substrate have respective interior recesses with deposited continuous metal coatings. A plurality of metal bonding bumps or bonding wall extends outwardly from the projecting walls of the bottom and top enclosures. The bonding bumps on the top enclosure engage reference ground metal traces on respective surface of the substrate. As a result of applied pressure, the bonding bumps and respective reference ground metal traces together with the through-substrate vias form a metal-to-metal singly-connected ground reference structure for the entire circuitry.