The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 18, 2023

Filed:

Dec. 29, 2020
Applicant:

Epistar Corporation, Hsinchu, TW;

Inventors:

Tzung-Shiun Yeh, Hsinchu, TW;

Li-Ming Chang, Hsinchu, TW;

Chien-Fu Shen, Hsinchu, TW;

Assignee:

EPISTAR CORPORATION, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/36 (2010.01); H01L 33/62 (2010.01); H01L 33/38 (2010.01); H01L 33/14 (2010.01); H01L 33/20 (2010.01);
U.S. Cl.
CPC ...
H01L 33/36 (2013.01); H01L 33/38 (2013.01); H01L 33/62 (2013.01); H01L 33/14 (2013.01); H01L 33/20 (2013.01);
Abstract

An optoelectronic device includes a semiconductor stack including a top surface; a current blocking region, including a first pad portion formed on the semiconductor stack and wherein the current blocking region includes transparent insulated material; a first opening, formed in the first pad portion, exposing the top surface of the semiconductor stack; a transparent conductive layer, covering the top surface of the semiconductor stack, including a second opening overlapping the first opening; and a first electrode, formed on the semiconductor stack, including a first pad electrode formed on the first pad portion of the current blocking region; wherein the first pad electrode contacts the semiconductor stack through the first opening and the second opening; wherein the first opening includes a first area, the first pad portion and the first opening compose a total area, and a ratio of the first area to the total area is between 10% and 40%.


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