The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 18, 2023
Filed:
Apr. 10, 2019
Applicant:
Sony Corporation, Tokyo, JP;
Inventors:
Hiroshi Nakano, Tokyo, JP;
Toshiki Moriwaki, Tokyo, JP;
Assignee:
SONY CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0376 (2006.01); H01L 27/146 (2006.01); H01L 31/032 (2006.01); H01L 31/102 (2006.01);
U.S. Cl.
CPC ...
H01L 31/0376 (2013.01); H01L 27/14647 (2013.01); H01L 31/032 (2013.01); H01L 31/102 (2013.01);
Abstract
An imaging device includes a photoelectric conversion unit in which a first electrode, a photoelectric conversion layer, and a second electrode are stacked. A semiconductor material layer including an inorganic oxide semiconductor material having an amorphous structure at least in a portion is formed between the first electrode and the photoelectric conversion layer, and the formation energy of an inorganic oxide semiconductor material that has the same composition as the inorganic oxide semiconductor material having an amorphous structure and has a crystalline structure has a positive value.