The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 18, 2023
Filed:
Mar. 31, 2021
Applicant:
Canon Kabushiki Kaisha, Tokyo, JP;
Inventors:
Ryo Hayashi, Yokohama, JP;
Masafumi Sano, Yokohama, JP;
Katsumi Abe, Kawasaki, JP;
Hideya Kumomi, Tokyo, JP;
Kojiro Nishi, Yokohama, JP;
Assignee:
CANON KABUSHIKI KAISHA, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 27/12 (2006.01); G02F 1/1368 (2006.01); H10K 59/123 (2023.01); H10K 59/126 (2023.01); H10K 102/00 (2023.01);
U.S. Cl.
CPC ...
H01L 29/78633 (2013.01); G02F 1/1368 (2013.01); H01L 27/1225 (2013.01); H01L 29/7869 (2013.01); H01L 29/78693 (2013.01); H10K 59/123 (2023.02); H10K 59/126 (2023.02); H10K 2102/311 (2023.02);
Abstract
A field-effect transistor includes a substrate, a source electrode, a drain electrode, a gate electrode, a gate-insulating film, and an active layer. The active layer contains an oxide having a transmittance of 70% or more in the wavelength range of 400 to 800 nm. A light-shielding member is provided as a light-shielding structure for the active layer, for example, on the bottom face of the substrate.