The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 18, 2023

Filed:

Apr. 04, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Hyo Jin Kim, Hwaseong-si, KR;

Dong Woo Kim, Incheon, KR;

Sang Moon Lee, Suwon-si, KR;

Seung Hun Lee, Hwaseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 21/768 (2006.01); H01L 21/8238 (2006.01); H01L 29/786 (2006.01); H01L 27/092 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7848 (2013.01); H01L 21/76829 (2013.01); H01L 21/823821 (2013.01); H01L 27/0924 (2013.01); H01L 29/7851 (2013.01); H01L 29/78696 (2013.01); H01L 29/0653 (2013.01);
Abstract

A semiconductor device includes first and second fin-shaped patterns disposed on a substrate and extending in a first direction, first and second channel layers disposed on the first and second fin-shaped patterns, first and second etch stop layers disposed inside the first and second channel layers, first and second gate structures extending in a second direction different from the first direction on the first channel layer with a first recess formed therebetween, third and fourth gate structures extending in the second direction on the second channel layer with a second recess formed therebetween, the first recess having a first width in the first direction and having a first depth in a third direction perpendicular to the first and second directions, the second recess having a second width different from the first width in the first direction, and having a second depth equal to the first depth in the third direction.


Find Patent Forward Citations

Loading…