The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 18, 2023
Filed:
May. 24, 2022
Rohm Co., Ltd., Kyoto, JP;
Hirotaka Otake, Kyoto, JP;
ROHM CO., LTD., Kyoto, JP;
Abstract
A nitride semiconductor deviceincludes a first transistorwhich is constituted of a normally-off transistor and functions as a main transistor and a second transistorwhich is constituted of a normally-on transistor and arranged to limit a gate current of the first transistor. The first transistorincludes a first electron transit layerA constituted of a nitride semiconductor and a first electron supply layerA which is formed on the first electron transit layer and constituted of a nitride semiconductor. The second transistorincludes a second electron transit layerB constituted of a nitride semiconductor and a second electron supply layerB which is formed on the second electron transit layer and constituted of a nitride semiconductor. A gate electrodeand a source electrodeof the second transistorare electrically connected to a gate electrodeof the first transistor