The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 18, 2023

Filed:

Sep. 30, 2020
Applicants:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Research & Business Foundation Sungkyunkwan University, Suwon-si, KR;

Inventors:

Jin Bum Kim, Seoul, KR;

MunHyeon Kim, Hwaseong-si, KR;

Hyoung Sub Kim, Seoul, KR;

Tae Jin Park, Yongin-si, KR;

Kwan Heum Lee, Suwon-si, KR;

Chang Woo Noh, Hwaseong-si, KR;

Maria Toledano Lu Que, Hwaseong-si, KR;

Hong Bae Park, Seoul, KR;

Si Hyung Lee, Hwaseong-si, KR;

Sung Man Whang, Yongin-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/423 (2006.01); H01L 29/78 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66545 (2013.01); H01L 29/42392 (2013.01); H01L 29/6656 (2013.01); H01L 29/66439 (2013.01); H01L 29/66636 (2013.01); H01L 29/66795 (2013.01); H01L 29/7848 (2013.01); H01L 29/78696 (2013.01);
Abstract

A semiconductor device includes a substrate, a gate electrode on the substrate, a gate spacer on a sidewall of the gate electrode, an active pattern penetrating the gate electrode and the gate spacer, and an epitaxial pattern contacting the active pattern and the gate spacer. The gate electrode extends in a first direction. The gate spacer includes a semiconductor material layer. The active pattern extends in a second direction crossing the first direction.


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