The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 18, 2023

Filed:

Apr. 15, 2021
Applicant:

Kioxia Corporation, Tokyo, JP;

Inventors:

Satoshi Wakatsuki, Yokkaichi, JP;

Masayuki Kitamura, Yokkaichi, JP;

Atsuko Sakata, Yokkaichi, JP;

Assignee:

Kioxia Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 23/00 (2006.01); H10B 41/30 (2023.01); H10B 43/30 (2023.01);
U.S. Cl.
CPC ...
H01L 23/562 (2013.01); H01L 29/0649 (2013.01); H10B 41/30 (2023.02); H10B 43/30 (2023.02);
Abstract

In one embodiment, a semiconductor device includes a substrate, and a plurality of insulating layers provided on the substrate. The device further includes a plurality of electrode layers provided on the substrate alternately with the plurality of insulating layers and including metal atoms and impurity atoms different from the metal atoms, lattice spacing between the metal atoms in the electrode layers being greater than lattice spacing between the metal atoms in an elemental substance of the metal atoms.


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