The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 18, 2023
Filed:
Jun. 27, 2019
Applicant:
Osram Oled Gmbh, Regensburg, DE;
Inventors:
Benjamin Michaelis, Regensburg, DE;
Markus Broell, Hamburg, DE;
Robert Walter, Parsberg, DE;
Franz Eberhard, Kilchberg, CH;
Michael Huber, Bad Abbach, DE;
Wolfgang Schmid, Gundelshausen, DE;
Assignee:
OSRAM OLED GmbH, Regensburg, DE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/78 (2006.01); H01L 33/00 (2010.01); H01L 23/50 (2006.01); H01L 23/00 (2006.01); H01L 31/02 (2006.01); H01L 31/0216 (2014.01); H01L 31/18 (2006.01); H01L 33/44 (2010.01); H01L 33/62 (2010.01);
U.S. Cl.
CPC ...
H01L 21/78 (2013.01); H01L 23/50 (2013.01); H01L 24/94 (2013.01); H01L 31/02002 (2013.01); H01L 31/0216 (2013.01); H01L 31/186 (2013.01); H01L 33/0093 (2020.05); H01L 33/0095 (2013.01); H01L 33/44 (2013.01); H01L 33/62 (2013.01); H01L 24/32 (2013.01); H01L 24/83 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/83192 (2013.01); H01L 2224/83801 (2013.01);
Abstract
A semiconductor component may include a first compressive strain layer on top of a semiconductor body. A material for the first compressive strain layer may include Ta, Mo, Nb, compounds thereof, and combinations thereof.