The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 18, 2023

Filed:

Jul. 02, 2021
Applicants:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Toshiba Electronic Devices & Storage Corporation, Minato-ku, JP;

Inventor:

Yuhki Fujino, Kanazawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 21/22 (2006.01); H01L 21/285 (2006.01); H01L 21/265 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/66 (2006.01); H01L 21/324 (2006.01);
U.S. Cl.
CPC ...
H01L 21/22 (2013.01); H01L 21/265 (2013.01); H01L 21/28556 (2013.01); H01L 21/324 (2013.01); H01L 29/0847 (2013.01); H01L 29/1095 (2013.01); H01L 29/6659 (2013.01);
Abstract

A semiconductor device includes a semiconductor part; first and second electrodes, the semiconductor part being provided between the first and second electrodes; a control electrode selectively provided between the semiconductor part and the second electrode; and a contacting part electrically connecting the semiconductor part and the second electrode. The semiconductor part includes a first layer of a first conductivity type, a second layer of a second conductivity type provided between the first layer and the second electrode, a third layer of the first conductivity type selectively provided between the second layer and the second electrode, and a fourth layer of the second conductivity type selectively provided between the second layer and the second electrode. The contacting part includes a first semiconductor portion of the first conductivity type contacting the third layer, and a second semiconductor portion of the second conductivity type contacting the fourth layer.


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