The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 18, 2023
Filed:
Jun. 04, 2021
Applicant:
Mi2-factory Gmbh, Jena, DE;
Inventors:
Florian Krippendorf, Jena, DE;
Constantin Csato, Stammbach, DE;
Assignee:
MI2-FACTORY GMBH, Jena, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/317 (2006.01); H01J 37/05 (2006.01); C23C 14/18 (2006.01); C23C 14/48 (2006.01); H01J 37/147 (2006.01); H01J 37/20 (2006.01); H01L 21/04 (2006.01); H01L 29/32 (2006.01);
U.S. Cl.
CPC ...
H01J 37/05 (2013.01); C23C 14/18 (2013.01); C23C 14/48 (2013.01); H01J 37/1477 (2013.01); H01J 37/20 (2013.01); H01J 37/317 (2013.01); H01J 37/3171 (2013.01); H01L 21/046 (2013.01); H01L 29/32 (2013.01); H01J 2237/024 (2013.01); H01J 2237/057 (2013.01); H01J 2237/1518 (2013.01); H01J 2237/20214 (2013.01);
Abstract
A method comprising the irradiation of a wafer by an ion beam that passes through an implantation filter. The wafer is heated to a temperature of more than 200° C. The wafer is a semiconductor wafer including SiC, and the ion beam includes aluminum ions.